Sr Research Scientist Epitaxial Eng

Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

High Performance Analog (HPA) is a leading supplier of RF and power management solutions for infrastructure, defense & aerospace, automotive power and other high-growth markets. HPA’s diverse portfolio of differentiated technologies and products supports multi-year market drivers such as electrification, renewable energy, the increasing semiconductor spend in defense and 5G deployments outside of China.

SUMMARY:
Qorvo’s High Performance Analog (HPA) creates and utilizes advanced technology as a strategic differentiator and a competitive advantage.  We are looking for a Senior Research Engineer, to help develop advanced materials and emerging technologies through innovative semiconductor materials deposition and characterization development. The successful candidate will drive technology development and innovation that identifies, validates, and demonstrates technologies resulting in measurable impact to the business. This position is located in Richardson, TX.

RESPONSIBILITIES:

• Serve as an epi growth and characterization expert to lead/support Qorvo’s short-term and long-term development roadmap.
• Collaborate with internal customers within the organization and external partners to develop advanced materials for RF semiconductor technologies that meet aggressive performance goals
• Excellent communication skills and technical competencies to interact with both internal and external customers.
• Strong organization and influencing skills to effectively work with inter-disciplinary and cross functional teams within Qorvo to achieve project goals.

QUALIFICATIONS:

• PhD in, material science, physics, electrical engineering, or related field. 
• Research experience in GaN based MOCVD and/or MBE. 
• Experience with materials characterization techniques such as: X-ray diffraction, X-ray reflectivity, photoluminescence, atomic force microscopy, and Hall and C-V electrical measurements. 
• Experience in design and modification of semiconductor deposition and characterization equipment; ability to modify to suit research direction
• Deep understanding of III-V semiconductor materials, processes and physics with the ability to propose and demonstrate novel solutions to enhance the performance of RF devices.
• Demonstrated ability to solve problems and to prioritize competing demands.
• Strong communication, presentation and teamwork skills.
• Solid background in compound semiconductors devices with specific understanding of GaN and GaAs pHEMT transistors is preferred.

Because this position is part of a business unit that contracts with the US government, qualified candidates must be a U.S. person

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Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

We are an Equal Employment Opportunity (EEO) / Affirmative Action employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, military or veteran status, physical or mental disability, genetic information, and/or any other status protected by law.