Senior R&D Eng - GaN Device & Process

Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

We are looking for a Senior R&D Engineer to spearhead the research and development of advanced semiconductor device and processing efforts. Working closely with designers and other engineers to lead technology innovation in the areas of advanced transistor device design, fabrication and process flow, and integration targeting RF applications. Interact with and support commercial, military, government and customers through effective communication and presentations. The ideal candidate has worked in research setting with a proven record of innovation and technology leadership through publications and IP generation.

Key Roles and Responsibilities: 

• Lead novel device development projects by working with fellow engineers, program managers, and customers to develop advanced RF semiconductor components that meet aggressive performance targets

• Hands-on operation of semiconductor fabrication equipment to develop and troubleshoot sophisticated wafer-level processes

• Creating test solutions and performing DC, RF and reliability tests for GaN devices. Analyze data and extract conclusions from the results

• Effectively work with inter-disciplinary and cross functional technical teams to achieve project goals, including strong organization and coordination skills

• Author and review proposals and technical articles seeking external R&D funding that aligns with Qorvo's technology roadmaps

Qualifications:

• Deep understanding in HEMT device physics, semiconductor processing, and characterization with the ability to propose and demonstrate novel solutions to enhance device performance.
• Must be a strong individual contributor that is self-starting and able to make technical decisions in a fast-paced research environment
• Understanding of statistical process control (SPC) and design of experiments (DOE)
• Strong communication, presentation and teamwork skills are required
• Experiences in leading, capturing and executing external funded research projects are highly preferred
• PhD in electrical engineering, material science, physics or related field; Minimum of 3 years of experience in semiconductor device research or process development required

Position Location: Richardson, Texas

Relocation Eligible:  Yes

Citizenship:  US Citizen or Permanent Resident 

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MAKE A DIFFERENCE AT QORVO   

We are Qorvo. We do more than create innovative RF and Power solutions for the mobile, defense and infrastructure markets – we are a place to innovate and shape the future of wireless communications. It starts with our employees. As a unified global team, we bring a commitment to excellence, growth and a passion for creating what's next. Explore the possibilities with us.

We are an Equal Employment Opportunity (EEO) / Affirmative Action employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, military or veteran status, physical or mental disability, genetic information, and/or any other status protected by law.